The 650V CoolMOS C6/E6 series of high-performance power MOSFETs combine the advantages of modern superjunction (SJ) devices with easy control of switching behaviour as well as high body diode ...
GaN Systems will demonstrate its 650-V, 150-A GaN power transistor at PCIM Europe, claiming the industry’s highest-current 650-V GaN power transistor. The GS-065-150 device delivers 100 times lower ...
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
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Diodes broadens automotive transistor range with new devices
US-based semiconductor manufacturer Diodes has added new automotive-grade bipolar transistor series, DXTN/P 78Q and DXTN/P ...
Efficiency is the name of the game in the design of power supplies. This is a major reason why switch-mode power supplies (SMPSs) are chosen for power-supply designs. However, even SMPSs have their ...
Graphene has already brought us the world’s smallest transistor, a triple-mode, single transistor amplifier and a supercapacitor that can store as much energy as a battery while recharging in seconds.
Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team developed a thickness-controlled black phosphorous tunnel ...
The purpose of the project is the ability to replace a failed power supply by constructing a high power switching power supply. In the design, a 16A VARIAC is used to help keep the smoke inside the ...
LTSpice is a tool that every electronics nerd should have at least a basic knowledge of. Those of us who work professionally in the analog and power worlds rely heavily on the validity of our ...
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