Seeking Alpha

ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF ...

Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading[1] reverse ...
EDN

SiC Schottky diodes features industry-best VF, recovery time

The SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD) offer industry-leading low forward voltage and fast recovery time. It helps improve power conversion ...
Electronic Design

Reverse Recovery

The figure shows what happens to the diode in the boost converter presented in Figure 1. When the diode turns on, there's an overshoot due to the higher resistance of the n­ region, relative to the ...
Electronic Design

Low-Profile 1-A Rectifiers Boast 25-ns Reverse Recovery Time

A series of low-profile, surface-mount 1-A rectifiers have a 100- to 200-V voltage range and 25-ns reverse recovery time for high-frequency applications. The MUH1Px series offers designers a choice of ...